4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co (er))
Reduced switching and conduction losses
Transistor polarity: N-Channel
Vds (Drain-source separation voltage): 600 V
Id: continuous drain current: 14 A
Rds on (source drain in resistance): 80 mOhms
Vgs (gate-source voltage): - 30 V, + 30 V
Vgs th (gate-source threshold voltage): 5 V
Minimum operating temperature: - 55 ºC
Maximum operating temperature: + 150 ºC
Pd (power dissipation): 35 W
Capsule: TO-220FP-3