N Channel FET type MOSFET technology (metal oxide)
Drain-source voltage (Vdss) 200 V
Current: continuous consumption (Id) at 25 ºC 9.5 A (Tc)
Vgs(th) (max.) : at Id 4 V at 1 mA
Input capacitance (Ciss) (max) at Vds 530 pF at 25 V
Power dissipation (max) 75 W (Tc)
Rds on (max) according to Id, Vgs at 25 °C 400 mOhm at 6 A, 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Case: TO-220