These flat epitaxial silicon diodes are designed for very high speed multichannel equipment applications
They are hermetically sealed in TO5 or TO18 packages
The excellent thermal conductivity of the diodes allows operation up to 400mW
Storage temperature: -55ºC to +200ºC
Maximum operating temperature: +175ºC
Total dissipation at 25ºC: 0.4W
Maximum voltage at 25ºC: 40V
Maximum continuous current: 0.3A
Average rectified current: 0.2A
Impulse current: 1A