Infineon Technologies K75T60 - TrenchStop IGBT - 80 A - 600 V - TO-247 - IKW75N60T

SMITIKW75N60T

Datasheet

Datasheet

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Quantity

VAT NOT INCLUDED

VAT INCLUDED

15.00 €

18.15 €

Identification

EE Code SMITIKW75N60T

Brand

Infineon

Model K75T60

Manufacturer code IKW75N60T

EAN13

Features

This is an Infineon IGBT transistor with TrenchStop™ technology

The collector-emitter voltage ratings for this technology are 600 and 650 V. The range includes devices with an integrated high-speed, fast-recovery anti-parallel diode.

Specifications

Very low VCE(sat): 1.5V(typ.)
Maximum Junction Temperature: 175°C
Short circuit with stand time: 5 µs
Positive temperature coefficient in VCE(sat)
Low EMI
Maximum Continuous Collector Current: 80 A
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: ±20V
Maximum Power Dissipation: 428 W
Encapsulation: TO-247

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TOTAL

Infineon Technologies K75T60 - TrenchStop IGBT - 80 A - 600 V - TO-247 - IKW75N60T

SMITIKW75N60T

Identification

Features

Specifications