TRANSISTOR, NPN, TO-18 Transistor Polarity:NPN Collector-to-Emitter Breakdown Voltage:20V Typ Gain Bandwidth ft:150MHz Power Dissipation Pd:600mW DC Collector Current:200mA DC Current Gain hFE:800 Transistor Case Style:TO-18 Case Style:TO-18 Current Ic hFE:2mA Full Power Rating Temperature:25°C Max Current Ic:0.1A Max Current Ic Continuous a:0.1A Max Noise Factor:4dB Max Power Dissipation Ptot:600mW Max Voltage Vce Sat:0.25V Min Gain Bandwidth ft:150MHz Min Hfe:420 Power Dissipation:0.6W Transistor Type:Bipolar Voltage Vcbo:30V
Encapsulado: TO-18