D @ TC = 25°C Continuous Drain Current, VGS @ 10V 50A*
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37A
IDM Pulsed Drain Current 210A
PD @TC = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1 N•m)
Parameter Min. Typ. Max. Units
RqJC Junction-to-Case 1.0
RqCS Case-to-Sink, Flat, Greased Surface 0.50 RqJA Junction-to-Ambient 62º
Thermal Resistance
°C/W
TO-220 HexSense
Encapsulamento: TO-220-5