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TRANSISTOR, NPN
Transistor Polarity:NPN
Collector-to-Emitter Breakdown Voltage:20V
Typ Gain Bandwidth ft:150MHz
Power Dissipation Pd:600mW
DC Collector Current:200mA
DC Current Gain hFE:800
Current Ic hFE:2mA
Full Power Rating Temperature:25°C
Max Current Ic:0.1A
Max Current Ic Continuous a:0.1A
Max Noise Factor:4dB
Max Power Dissipation Ptot:600mW
Max Voltage Vce Sat:0.25V
Min Gain Bandwidth ft:150MHz
Min Hfe:420
Power Dissipation:0.6W
Transistor Type:Bipolar
Voltage Vcbo:30V
Encapsulamento: TO-18
