Produto esgotado. Podemos avisar quando estiver disponível.
25 µm, 300 nm coating
A silicon dioxide wafer—also known as a thermal oxide wafer—is produced at high temperatures.
Thermal oxide is typically grown in a horizontal tube furnace at temperatures ranging from 900 °C to 1200 °C.
Thermal oxide is a type of "grown" oxide layer; compared to an oxide layer deposited via CVD (chemical vapor deposition), it offers greater uniformity and higher dielectric strength, making it an excellent dielectric insulating layer.
In most silicon-based devices, the thermal oxide layer plays a significant role by conditioning the silicon surface, acting as a doping barrier and a surface dielectric.
It provides excellent thickness uniformity and high purity.
Consequently, this is the preferred method for producing high-quality, thin silicon dioxide layers.
Thicker oxide layers are typically produced via wet oxidation, a process in which the growth rate increases significantly.
