Stock | Cantidad | |
---|---|---|
1 |
MOSFET, N, TO-3
Polaridad del transistor: Canal N
Continuous Drain Current Id: 30A
Drain Source Voltage Vds: 200V
On Resistance Rds(on): 85mohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs Typ: 4V
Power Dissipation Pd: 150W
Transistor Case Style: TO-3
Corriente, ID máx.: 20A
Current Temperature: 25°C
Marcador: IRF250
Fixing Centres: 30mm
Full Power Rating Temperature: 25°C
Lead Spacing: 11mm
N.º of Transistors: 1
Package / Case: TO-3
Power Dissipation Pd: 150W
Power Dissipation Pd: 150W
Pulse Current Idm: 120A
Tipo de terminación: Agujero pasante
Voltage Vds Typ: 200V
Voltage Vgs Max: 4V
Voltage Vgs Rds on Measurement: 10V
Encapsulado: TO-3