IGBT Transistor
Manufacturer: IXYS
Transistor type: IGBT
Technology: GenX3™, Planar, XPT™
Collector-emitter voltage: 900V
Collector current: 60A
Power dissipation: 750W
Encapsulation: TO247
Input - emitter voltage: ±20V
Impulse collector current: 310A
Gate charge: 107nC
Connection time: 104ns
Disconnection time: 268ns